Mesh update techniques for free-surface flow solvers using spectral element method

This paper presents a novel mesh-update technique for unsteady free-surface Newtonian flows using spectral element method and relying on the arbitrary Lagrangian--Eulerian kinematic description for moving the grid. Selected results showing compatibility of this mesh-update technique with spectral element method are given

Charge Storage Effect in a Trilayer Structure Comprising Germanium Nanocrystals

A metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm) was fabricated on a p-type Si substrate. The MIS device was rapid thermal annealed at 1000°C. Capacitance-voltage (C-V) measurements showed that, after rapid thermal annealing at 1000°C for 300s in Ar, the trilayer device exhibited charge storage property. The charge storage effect was not observed in a device with a bilayer structure without the Ge middle layer. With increasing rapid thermal annealing time from 0 to 400s, the width of the C-V hysteresis of the trilayer device increased significantly from 1.5V to ~11V, indicating that the charge storage capability was enhanced with increasing annealing time. High-resolution transmission electron microscopy results confirmed that with increasing annealing time, the 2.4nm amorphous middle Ge layer crystallized gradually. More Ge nanocrystals were formed and the crystallinity of the Ge layer improved as the annealing time was increased. When the measurement temperature was increased from –50°C to 150°C, the width of the hysteresis of the MIS device reduced from ~10V to ~6V. This means that the charge storage capability of the trilayer structure decreases with increasing measurement temperature. This is due to the fact that the leakage current in the trilayer structure increases with increasing measurement temperature.Singapore-MIT Alliance (SMA

Dependence of nanocrystal formation and charge storage/retention performance of a tri-layer memory structure on germanium concentration and tunnel oxide thickness

The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer metal-insulator-semiconductor device was studied. We found that the RTO and the capping oxide layers were not totally effective in confining the Ge nanocrystals in the middle layer when a pure Ge middle layer was used for the formation of nanocrystals. From the transmission electron microscopy and secondary ion mass spectroscopy results, a significant diffusion of Ge atoms through the RTO and into the silicon (Si) substrate was observed when the RTO layer thickness was reduced to 2.5 nm. This resulted in no (or very few) nanocrystals formed in the system. For devices with a Ge+SiO₂ co-sputtered middle layer (i.e., lower Ge concentration), a higher charge storage capability was obtained than with devices with a thinner RTO layer, and the charge retention time was found to be less than in devices with a thicker RTO layer.Singapore-MIT Alliance (SMA

Synthesis of Germanium Nanocrystals and its Possible Application in Memory Devices

A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A tri-layer structure comprising of a thin (~5nm) SiO₂ layer grown using rapid thermal oxidation (RTO), followed by a layer of Ge+SiO₂ of varying thickness (6 - 20 nm) deposited using the radio frequency (r.f.) co-sputtering technique and a SiO₂ cap layer (50nm) deposited using r.f. sputtering, was investigated. It was verified using TEM that germanium nanocrystals of sizes ranging from 6 – 20 nm were successfully fabricated after thermal annealing of the tri-layer structure under suitable conditions. The nanocrystals were found to be well confined by the RTO SiO₂ and the cap SiO₂ under specific annealing conditions. The electrical properties of the tri-layer structure have been characterized using MOS capacitor test devices. A significant hysteresis can be observed from the C-V measurements and this suggests the charge storage capability of the nanocrystals. The proposed technique has the potential for fabricating memory devices with controllable nanocrystals sizes.Singapore-MIT Alliance (SMA

Charge Storage Mechanism and Size Control of Germanium Nanocrystals in a Tri-layer Insulator Structure of a MIS Memory Device

A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-layer metal-insulator-semiconductor (MIS) memory device structure comprising of a thin (~5nm) silicon dioxide (SiO₂) layer grown using rapid thermal oxidation (RTO), followed by a layer of Ge+SiO₂ of varying thickness (3 - 6 nm) deposited using a radio frequency (rf) co-sputtering technique, and a capping SiO₂ layer (50nm) deposited using rf sputtering is investigated. It was verified that the size of germanium (Ge) nanocrystals in the vertical z-direction in the trilayer memory device was controlled by varying the thickness of the middle (cosputtered Ge+SiO₂) layer. From analyses using transmission electron microscopy and capacitance-voltage measurements, we deduced that both electrons and holes are most likely stored within the nanocrystals in the middle layer of the trilayer structure rather than at the interfaces of the nanocrystals with the oxide matrix.Singapore-MIT Alliance (SMA

Deficiency of CCAAT/enhancer binding protein-epsilon reduces atherosclerotic lesions in LDLR-/- Mice

10.1371/journal.pone.0085341PLoS ONE91-POLN

Spontaneous decay in the presence of dispersing and absorbing bodies: general theory and application to a spherical cavity

A formalism for studying spontaneous decay of an excited two-level atom in the presence of dispersing and absorbing dielectric bodies is developed. An integral equation, which is suitable for numerical solution, is derived for the atomic upper-state-probability amplitude. The emission pattern and the power spectrum of the emitted light are expressed in terms of the Green tensor of the dielectric-matter formation including absorption and dispersion. The theory is applied to the spontaneous decay of an excited atom at the center of a three-layered spherical cavity, with the cavity wall being modeled by a band-gap dielectric of Lorentz type. Both weak coupling and strong coupling are studied, the latter with special emphasis on the cases where the atomic transition is (i) in the normal-dispersion zone near the medium resonance and (ii) in the anomalous-dispersion zone associated with the band gap. In a single-resonance approximation, conditions of the appearance of Rabi oscillations and closed solutions to the evolution of the atomic state population are derived, which are in good agreement with the exact numerical results.Comment: 12 pages, 6 figures, typos fixed, 1 figure adde

Electromagnetic-field quantization and spontaneous decay in left-handed media

We present a quantization scheme for the electromagnetic field interacting with atomic systems in the presence of dispersing and absorbing magnetodielectric media, including left-handed material having negative real part of the refractive index. The theory is applied to the spontaneous decay of a two-level atom at the center of a spherical free-space cavity surrounded by magnetodielectric matter of overlapping band-gap zones. Results for both big and small cavities are presented, and the problem of local-field corrections within the real-cavity model is addressed.Comment: 15 pages, 5 figures, RevTe

Skyrmion Excitations in Quantum Hall Systems

Using finite size calculations on the surface of a sphere we study the topological (skyrmion) excitation in quantum Hall system with spin degree of freedom at filling factors around $\nu=1$. In the absence of Zeeman energy, we find, in systems with one quasi-particle or one quasi-hole, the lowest energy band consists of states with $L=S$, where $L$ and $S$ are the total orbital and spin angular momentum. These different spin states are almost degenerate in the thermodynamic limit and their symmetry-breaking ground state is the state with one skyrmion of infinite size. In the presence of Zeeman energy, the skyrmion size is determined by the interplay of the Zeeman energy and electron-electron interaction and the skyrmion shrinks to a spin texture of finite size. We have calculated the energy gap of the system at infinite wave vector limit as a function of the Zeeman energy and find there are kinks in the energy gap associated with the shrinking of the size of the skyrmion. breaking ground state is the state with one skyrmion of infinite size. In the presence of Zeeman energy, the skyrmion size is determined by the interplay of the Zeeman energy and electron-electronComment: 4 pages, 5 postscript figures available upon reques